Semiconductor saturable absorbers with recovery time controlled by lattice mismatch

Mircea D. Guina; Soile Suomalainen; Tommi Hakulinen; Oleg G. Okhotnikov; Saulius Marcinkevicius

doi:10.1117/12.700273

20 February 2007 Semiconductor saturable absorbers with recovery time controlled by lattice mismatch

Mircea D. Guina, Soile Suomalainen, Tommi Hakulinen, Oleg G. Okhotnikov, Saulius Marcinkevicius

Proceedings Volume 6469, Optical Components and Materials IV; 64690P (2007) https://doi.org/10.1117/12.700273
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We propose and demonstrate a new method to reduce the absorption recovery time of semiconductor saturable absorber mirrors operating at the 1060-nm wavelength range. The method is based on controlling the amount of nonradiative recombination centers within the absorbing region by incorporating an InGaP epitaxial layer with a relative large lattice mismatch to GaAs (~2.2 %). The defect density within the absorbing region can be controlled by the thickness of a GaAs buffer layer grown between the InGaP lattice mismatched layer and the InGaAs/GaAs quantum-wells. For thickness of the GaAs buffer of ~110 nm and ~570 nm the absorption recovery time was ~5 ps and ~10 ps, respectively. It is important to note that the fast recovery time was achieved without degrading the nonlinear optical properties of the saturable absorber mirror. The practicality of the structures was proved by demonstrating a reliable self-starting operation of a mode-locked Yb-doped fiber laser.

Citation Download Citation

Mircea D. Guina, Soile Suomalainen, Tommi Hakulinen, Oleg G. Okhotnikov, and Saulius Marcinkevicius "Semiconductor saturable absorbers with recovery time controlled by lattice mismatch", Proc. SPIE 6469, Optical Components and Materials IV, 64690P (20 February 2007); https://doi.org/10.1117/12.700273

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