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8 February 2007 Fast carrier dynamics in novel GaAs deep-centers for high-efficiency light-emitters for 1.3um-1.5um fiber optics
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Abstract
We demonstrate the first LEDs at 1.3-1.5um using GaAs deep-centers having higher (90%) efficiencies and larger Einstein B-coefficients than bulk InGaAs. An observed absence of deep-center self-absorption (from a Franck-Condon shift) could make possible near-zero threshold lasers. The fast capture (15- 40fs) of free holes by deep-centers, as well as the Einstein B-coefficient, are deduced from a combination of photoluminescence and electroluminescence measurements.
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Janet L. Pan "Fast carrier dynamics in novel GaAs deep-centers for high-efficiency light-emitters for 1.3um-1.5um fiber optics", Proc. SPIE 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, 64710D (8 February 2007); https://doi.org/10.1117/12.721464
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