Crosstalk of CMOS Image Sensor (CIS) causes degradation of spatial resolution, color mixing and leads to image noise.
Crosstalk consists of spectral, optical and electrical components, but definition of each component is obscure and
difficult to quantify. For the first time, quantifiable definition of each component is proposed to perform crosstalk
analysis in this paper. Contribution of each component to the total crosstalk is analyzed using opto-electrical simulation.
Simulation is performed with an internally developed 2D finite difference time domain (FDTD) simulator coupled to a
commercial device simulator. Simulation domain consists of set of four pixels. Plane wave propagation from micro-lens
to the photodiode is analyzed with FDTD and the optical simulation result is transformed into the photo-current in the
photodiode using electrical simulation. The total crosstalk consists of 43% of spectral crosstalk, 14% of optical cross talk,
and 43% of electrical crosstalk at the normal incident light. Spectral crosstalk can be suppressed through careful
selection of color filter materials with good selectivity of color spectrum. Characteristics of crosstalk and
photosensitivity show contrary trend to one another as a function of color filter thickness. Therefore, the crosstalk target
is fixed and simulation is performed to determine the minimum color filter thickness that satisfies the crosstalk target. By
color filter material and thickness optimization, 10% increase in photosensitivity and 7% decrease spectral crosstalk were
obtained. Electrical crosstalk showed 11% and 9% improvement through applying to new implantation process and
stacking multi-epi layer on the p-type substrate, respectively.