9 February 2007 Study on metal/p-GaN contacts on p-i-n GaN-based UV detectors
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The contact of p-GaN was formed under different annealing condition, and its effect on p-i-n GaN-based detectors was studied by current-voltage (I-V) measurements and the response spectra. The parameters of metal/p-GaN interface were obtained by fitting the forward I-V curves. The results show that ideal factor of metal-semiconductor ( M-S) contacts annealed at 550°C for 3min is about 1.19, which means the formation of good ohmic contacts at the M-S interface and leads a lower turn-on voltage. But metal/p-GaN contacts have no obvious effect on response spectra of detectors.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xue Li, Xue Li, Jun Chen, Jun Chen, Jingtong Xu, Jingtong Xu, Haimei Gong, Haimei Gong, Jiaxiong Fang, Jiaxiong Fang, "Study on metal/p-GaN contacts on p-i-n GaN-based UV detectors", Proc. SPIE 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, 64711B (9 February 2007); doi: 10.1117/12.700018; https://doi.org/10.1117/12.700018


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