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8 February 2007 Comparison of optical properties of InGaN/GaN/AlGaN laser structures grown by MOVPE and MBE
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Metalorganic vapor phase epitaxy (MOVPE) and plasma assisted molecular beam epitaxy (MBE) were used as alternative techniques to fabricate similar group-III-nitride laser structures. Utilization of high-pressure-grown GaN substrates resulted in reduction of threading dislocation density down to 105 cm-2. Light amplification features of the measured structures were evaluated by means of the variable stripe length method. Maximum peak modal gain values of 180 cm-1 for the MOVPE-grown sample and 315 cm-1 for the MBE-grown one were reached at corresponding pump power of 464 kWcm-2. Temperature-dependent photoluminescence measurements yielded activation energies of 41 meV nad 22 meV for MOVPE- and MBE-grown samples, respectively. Saturation lengths of 350 &mgr;m and 250 &mgr;m determined for MOVPE and MBE structures indicate reduced rate of nonradiative recombination compared to heteroepitaxy on foreign substrates. Differences in nonradiative recombination processes between the investigated structures lead to deviations in threshold for stimulated emission in favor of the MBE-grown sample.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Swietlik, C. Skierbiszewski, R. Czernecki, G. Franssen, P. Wisniewski, M. Leszczynski, I. Grzegory, P. Mensz, T. Suski, and P. Perlin "Comparison of optical properties of InGaN/GaN/AlGaN laser structures grown by MOVPE and MBE", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64731E (8 February 2007);

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