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8 February 2007 Enhanced luminescence from AlxGa1-xN/AlyGa1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia
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Abstract
We report the structural and optical properties of AlxGa1-xN/AlyGa1-yN quantum wells (QWs) structures grown by gas source molecular beam epitaxy with ammonia on sapphire (0001) substrates. QWs structures consist of five pairs of AlyGa1-yN, 0.3xGa1-xN, 0.55
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Sergey A. Nikishin, Boris A. Borisov, Gregory A Garrett, Wendy L. Sarney, Anand V. Sampath, Hongen Shen, Michael Wraback, and Mark Holtz "Enhanced luminescence from AlxGa1-xN/AlyGa1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647306 (8 February 2007); https://doi.org/10.1117/12.701394
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