8 February 2007 Narrow-width photoluminescence spectra of InGaN quantum wells grown on GaN (0001) substrates with misorientation toward [11-00] direction
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Abstract
The optical properties of InGaN quantum wells on misoriented GaN (0001) substrates were investigated. The fluctuation of peak wavelength and full width at half maximum of micro-photoluminescence from InGaN quantum wells was large when the misorientation angle was 0.0o. The micro-photoluminescence showed narrow-width spectra, with full width at half maximum below 60 meV, of InGaN quantum wells grown on GaN (0001) substrates with a misorientation angle of around 0.28o toward [11-00] direction. These results indicate that InGaN quantum wells have high crystalline quality when InGaN quantum wells are grown with misorientation angle between 0.2o and 0.3o toward [11-00] direction.
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Koichi Tachibana, Hajime Nago, Shin-ya Nunoue, "Narrow-width photoluminescence spectra of InGaN quantum wells grown on GaN (0001) substrates with misorientation toward [11-00] direction", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647307 (8 February 2007); doi: 10.1117/12.699662; https://doi.org/10.1117/12.699662
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