Optical properties of Berthelot-type behaviors in quaternary AlInGaN multiple quantum well heterostructures

Cheng-Wei Hung; Chih-Chun Ke; Da-Chuan Kuo; Wei-Jen Chen; Hui-Tang Shen; Ya-Fen Wu; Jen-Cheng Wang; Tzer-En Nee

doi:10.1117/12.703478

8 February 2007 Optical properties of Berthelot-type behaviors in quaternary AlInGaN multiple quantum well heterostructures

Cheng-Wei Hung, Chih-Chun Ke, Da-Chuan Kuo, Wei-Jen Chen, Hui-Tang Shen, Ya-Fen Wu, Jen-Cheng Wang, Tzer-En Nee

Author Affiliations +

Proceedings Volume 6473, Gallium Nitride Materials and Devices II; 64730C (2007) https://doi.org/10.1117/12.703478
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The anomalous Berthelot-type optical properties of quaternary AlInGaN heterostructure with different quantum well pairs have been systematically investigated in this study. The Berthelot-type model refers to the temperature dependence of emission intensity with blue then red shift behavior in disorder material system. The photoluminescence of the AlInGaN heterostructures is also found to exhibit such unique luminescence features as S-shaped emission peak energy similar to Berthelot-type properties over temperature. We ascribed the phenomenon to the spinodal decompositions, which will lead to the appearance of the Berthelot-type behavior. The increase of quantum well pairs will cause the incorporation of indium and/or aluminum atoms in the AlInGaN nanostructures more obviously, resulting in augmentation of the degree of crystalline randomization. In other words, the higher degree of disorder in AlInGaN heterostructures is observed to manifest not only the extension of static microbarrier width, but also the enhancement of carrier localization effects.

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Cheng-Wei Hung, Chih-Chun Ke, Da-Chuan Kuo, Wei-Jen Chen, Hui-Tang Shen, Ya-Fen Wu, Jen-Cheng Wang, and Tzer-En Nee "Optical properties of Berthelot-type behaviors in quaternary AlInGaN multiple quantum well heterostructures", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730C (8 February 2007); https://doi.org/10.1117/12.703478

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