8 February 2007 Spontaneous polarizations, electrical properties, and phononic properties of GaN nanostructures and systems
Author Affiliations +
Abstract
Spontaneous polarizations of GaN nanostructures and quantum dots are calculated for different surface terminations. In addition, dimensionally-confined phonons in GaN-based nanostructures are discussed. GaN-based nanostructures have applications in a variety of systems and concepts including: non-charge-transfer-based devices and single-photon detectors based on GaN-based double-barrier quantum-well injectors, conductive-polymer collectors, and colloidal quantum dot recombination regions. In this paper, application of photodetectors is considered along with the related application of using colloidal quantum-dot-based ensembles for solar cell applications.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takayuki Yamanaka, Takayuki Yamanaka, Ke Sun, Ke Sun, Yang Li, Yang Li, Mitra Dutta, Mitra Dutta, Michael A. Stroscio, Michael A. Stroscio, } "Spontaneous polarizations, electrical properties, and phononic properties of GaN nanostructures and systems", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730F (8 February 2007); doi: 10.1117/12.696291; https://doi.org/10.1117/12.696291
PROCEEDINGS
14 PAGES


SHARE
Back to Top