8 February 2007 Accumulation of hot phonons in GaN and related structures
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Abstract
Interaction of hot electrons with longitudinal optical (LO) phonons and the resultant accumulation of the phonons is investigated in the GaN-based channels subjected to high electric fields. Physical background of microwave noise technique for experimental investigation of hot phonons is described. The technique is applied to the 2DEG and 3DEG channels located in AlGaN/GaN and AlGaN/AlN/GaN heterostructures and silicon-doped GaN. The noise technique has yielded the pioneering result on the hot-phonon lifetime in the standard AlGaN/GaN channel of interest for microwave power transistors; the result is confirmed later by independent time-resolved intersubband absorption technique. At the high electron density, typical for 2DEG channels, the hot-phonon lifetime is independent of the lattice temperature; the lifetime is essentially shorter as compared with the values for bulk GaN at a low electron density. The dependence of lifetime on electron density available from time-resolved Raman hot-phonon lifetime measurements is discussed in terms of plasmon-assisted disintegration of LO-phonon-like quasiparticles launched by high-energy electrons.
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Arvydas Matulionis, Arvydas Matulionis, Ilona Matulionien?, Ilona Matulionien?, } "Accumulation of hot phonons in GaN and related structures", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730P (8 February 2007); doi: 10.1117/12.703451; https://doi.org/10.1117/12.703451
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