8 February 2007 Subpicosecond time-resolved Raman studies of LO phonons in GaN
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Abstract
Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime of the LO phonon mode in GaN at T = 300K for photoexcited electron-hole pair density ranging from 1016cm-3 to 2x1019 cm-3. The lifetime has been found to decrease from 2.5 ps, at the lowest density to 0.35 ps, at the highest density. Our experimental findings should help resolve the recent controversy over the lifetime of LO phonon mode in GaN.
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K. T. Tsen, Juliann G. Kiang, D. K. Ferry, H. Morkoç, "Subpicosecond time-resolved Raman studies of LO phonons in GaN", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730Q (8 February 2007); doi: 10.1117/12.703681; https://doi.org/10.1117/12.703681
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