Subpicosecond time-resolved Raman studies of LO phonons in GaN

K. T. Tsen; Juliann G. Kiang; D. K. Ferry; H. Morkoç

doi:10.1117/12.703681

8 February 2007 Subpicosecond time-resolved Raman studies of LO phonons in GaN

K. T. Tsen, Juliann G. Kiang, D. K. Ferry, H. Morkoç

Author Affiliations +

Proceedings Volume 6473, Gallium Nitride Materials and Devices II; 64730Q (2007) https://doi.org/10.1117/12.703681
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Subpicosecond time-resolved Raman spectroscopy has been used to measure the lifetime of the LO phonon mode in GaN at T = 300K for photoexcited electron-hole pair density ranging from 10¹⁶cm^-3 to 2x10¹⁹ cm^-3. The lifetime has been found to decrease from 2.5 ps, at the lowest density to 0.35 ps, at the highest density. Our experimental findings should help resolve the recent controversy over the lifetime of LO phonon mode in GaN.

Citation Download Citation

K. T. Tsen, Juliann G. Kiang, D. K. Ferry, and H. Morkoç "Subpicosecond time-resolved Raman studies of LO phonons in GaN", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730Q (8 February 2007); https://doi.org/10.1117/12.703681

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