8 February 2007 Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures
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Abstract
We have prepared bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surfaces of the LEDs with p-AlInGaN layers were rough with high density of hexagonal pits. It was also found that pit width and pit density depend on the growth temperature of the p-AlInGaN layer. Furthermore, it was found that we can achieve 62% enhancement in output intensity from the LED with 820°C p-AlInGaN cap layer without increasing the LED operation voltage.
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C. W. Kuo, C. M. Chen, C. H. Kuo, and G. C. Chi "Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730U (8 February 2007); doi: 10.1117/12.700303; https://doi.org/10.1117/12.700303
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