8 February 2007 Degradation studies of InGaN/GaN heterostructure laser diodes using a Kelvin Force Microscope
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Abstract
We demonstrate the potential of Kelvin Probe Force Microscopy (KPFM) for analyzing degradation effects in GaN-based laser diodes (LDs). Thereby, the surface potential at the mirror facet was measured locally for both, unbiased LDs and LDs exposed to a well-defined current. In the unbiased case, our KPFM measurements demonstrate the impact of aging on the mirror facet, which we attribute to a photon enhanced facet oxidation. In case of an externally applied voltage, the local variation of the Kelvin voltage across the heterostructure layer sequence is analyzed. A clear correlation between macroscopic I-V-characteristics and the microscopic data obtained with the KPFM is found.
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André Lochthofen, Wolfgang Mertin, Gerd Bacher, Michael Furitsch, Georg Brüderl, Berthold Hahn, Uwe Strauss, Volker Härle, "Degradation studies of InGaN/GaN heterostructure laser diodes using a Kelvin Force Microscope", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730Z (8 February 2007); doi: 10.1117/12.704855; https://doi.org/10.1117/12.704855
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