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8 February 2007 Degradation studies of InGaN/GaN heterostructure laser diodes using a Kelvin Force Microscope
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Abstract
We demonstrate the potential of Kelvin Probe Force Microscopy (KPFM) for analyzing degradation effects in GaN-based laser diodes (LDs). Thereby, the surface potential at the mirror facet was measured locally for both, unbiased LDs and LDs exposed to a well-defined current. In the unbiased case, our KPFM measurements demonstrate the impact of aging on the mirror facet, which we attribute to a photon enhanced facet oxidation. In case of an externally applied voltage, the local variation of the Kelvin voltage across the heterostructure layer sequence is analyzed. A clear correlation between macroscopic I-V-characteristics and the microscopic data obtained with the KPFM is found.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
André Lochthofen, Wolfgang Mertin, Gerd Bacher, Michael Furitsch, Georg Brüderl, Berthold Hahn, Uwe Strauss, and Volker Härle "Degradation studies of InGaN/GaN heterostructure laser diodes using a Kelvin Force Microscope", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730Z (8 February 2007); https://doi.org/10.1117/12.704855
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