15 February 2007 AlGaN/GaN field-plate FETs for microwave power applications
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Abstract
This paper describes the performance of AlGaN/GaN Field-Plate FETs and amplifiers for microwave power applications. Recessed-gate FETs with a single field-modulating plate (FP) and advanced dual field-modulating plates (FP's) FP are developed for high-voltage microwave power operation. The developed single FP-FETs exhibited a 230-W CW output power at 2 GHz and a 100-W CW output power at 5 GHz. The developed dual FP-FET provides higher gain, increased linearity and stability since the second FP effectively reduces feedback capacitance. Under a 2.15-GHz W-CDMA modulation scheme, the dual-FP-FET achieved a-state-of-the-art combination of 160-W output power and a 17.5 dB linear gain. The developed amplifier using two device dice for W-CDMA base stations delivers a 370-W peak output power and the amplifier for other L/S band high power applications delivers a pulsed 750-W output power at 2.14 GHz.
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H. Miyamoto, H. Miyamoto, Y. Ando, Y. Ando, Y. Okamoto, Y. Okamoto, T. Nakayama, T. Nakayama, A. Wakejima, A. Wakejima, T. Inoue, T. Inoue, Y. Murase, Y. Murase, K. Ota, K. Ota, K. Yamanoguchi, K. Yamanoguchi, N. Kuroda, N. Kuroda, M. Tanomura, M. Tanomura, K. Matsunaga, K. Matsunaga, } "AlGaN/GaN field-plate FETs for microwave power applications", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647315 (15 February 2007); doi: 10.1117/12.707334; https://doi.org/10.1117/12.707334
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