8 February 2007 Progress in etched facet technology for GaN and blue lasers
Author Affiliations +
We report recent progress in chemically assisted ion beam etching (CAIBE) of GaN/AlGaN materials leading to improved performance of 405nm blue lasers fabricated with etched mirrors. Using a proprietary Etched Facet Technology (EFT) designed for GaN, we have fabricated ridge lasers in conventional GaN/sapphire material. Typical 3&mgr;m ridge lasers with 600&mgr;m cavity lengths exhibit threshold currents of 150mA with high yield and cross wafer uniformity. This represents a factor of five reduction in threshold current over previous results. Additional processing (such as FIB) was not required to improve the mirror verticality and smoothness as in previous work. Continuing improvements in laser performance are anticipated with further optimization of facet smoothness, laser design, and improved epitaxial material. We are also investigating the benefits of shorter cavity lasers, made feasible by etching, to realize improvements in laser reliability and yield. The yield advantage is based on the concept that shorter cavity devices will intercept fewer defects per device. Combined with EFT advantages like low cost wafer-scale testing and monolithic integration, this is a promising approach for next generation blue lasers for optical storage applications.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alfred Schremer, Alfred Schremer, Cristian Stagarescu, Cristian Stagarescu, Jeff Hwang, Jeff Hwang, Fareen Khaja, Fareen Khaja, Vinu Vainateya, Vinu Vainateya, Alan Morrow, Alan Morrow, Alex Behfar, Alex Behfar, } "Progress in etched facet technology for GaN and blue lasers", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64731F (8 February 2007); doi: 10.1117/12.701425; https://doi.org/10.1117/12.701425


Back to Top