8 February 2007 Characterization of transient behavior of AlGaN/GaN HEMTs
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Abstract
We have studied transient behavior of AlGaN/GaN high electron mobility transistors (HEMTs) using various kinds of measurement techniques such as frequency dispersion of the drain conductance, low-frequency noise, drain current DLTS, and Kelvin probe force microscopy. It has been shown that the frequency dispersion has a correlation with the low-frequency noise. In order to study the transient behavior of the device in more detail, the drain current DLTS was applied to various types of HEMTs. Even though electron-trap-related negative peaks were observed for all types of devices, surface-states-related positive peaks were observed only for devices without Si3N4 passivation film. It has been shown by KFM measurement that the surface potential of the device which was subjected to the gate bias stress increased with time due to the emission of electrons which were captured at the surface states. These phenomena are consistent with the current collapse model where the collapse is caused by the electrons which are injected from the gate electrode and captured at the surface states.
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T. Mizutani, T. Mizutani, } "Characterization of transient behavior of AlGaN/GaN HEMTs", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64731L (8 February 2007); doi: 10.1117/12.697685; https://doi.org/10.1117/12.697685
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