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8 February 2007 Charge trapping on defects in AlGaN/GaN field effect transistors
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Abstract
The presence of electronic traps in GaN-based devices limits device performance and reliability. Crystallographic defects in the bulk and electronic states on the surface act as trapping centers. We review the trapping phenomena in GaN-based high electron mobility transistors and discuss a characterization method, current transient spectroscopy, applied for trap identification. Probing the charge trapping mechanisms allows us to extract the trap characteristics including the trapping potential, the binding energy of an electron on the trap, and the physical location of the active centers in the device.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oleg Mitrofanov and M. J. Manfra "Charge trapping on defects in AlGaN/GaN field effect transistors", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64731M (8 February 2007); https://doi.org/10.1117/12.707740
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