8 February 2007 Analytical model, simulation, and parameter extraction of AIGaN/ GaN HEMT for microwave circuit applications
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In this paper an improved temperature model for AlGaN/GaN high electron mobility transistor (HEMT) is presented. The two-dimensional Gaussian Standing Wave (GSW) equation is used to include the dependence of electron drift velocity on the longitudinal electric field. The effects of channel conductance in the saturation region and the parasitic resistance due to the undoped GaN buffer layer have been included. The effect of both spontaneous and piezoelectric polarization induced charges at the AlGaN/GaN heterointerface has been incorporated. The proposed model is used to determine the output current-voltage characteristics and small-signal microwave parameters of HEMTs. The major tasks of this paper include the establishment of the compact model including the polarization effects and the validation of the analytical results and experimental data with numerical simulator. High fT (10-70 GHz) values and high current levels (~650 mA/mm) are achieved. The calculated critical parameters and the simulation results suggest that the performance of the proposed device degrades at elevated temperatures.
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Hasina F. Huq, Hasina F. Huq, Syed K. Islam, Syed K. Islam, } "Analytical model, simulation, and parameter extraction of AIGaN/ GaN HEMT for microwave circuit applications", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64731N (8 February 2007); doi: 10.1117/12.696813; https://doi.org/10.1117/12.696813


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