20 February 2007 Characterization of Ag doped p-type ZnO films
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Abstract
Ag-doped ZnO thin films have been fabricated by pulsed laser deposition. Thermal analysis and X-ray photoelectron spectroscopy (XPS) were systematically investigated to verify the doping mechanism of Ag doped ZnO thin film depending on deposition temperature. The fabricated p-type Ag doped ZnO films shows the hole concentration in the range from 4.9x1016 to 6.0x1017 cm-3.
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G. H. Kim, G. H. Kim, B. D. Ahn, B. D. Ahn, D. L. Kim, D. L. Kim, K. H. Jung, K. H. Jung, S. Y. Lee, S. Y. Lee, } "Characterization of Ag doped p-type ZnO films", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 647409 (20 February 2007); doi: 10.1117/12.699613; https://doi.org/10.1117/12.699613
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