20 February 2007 Etching of ZnO toward the development of ZnO homostructure LEDs
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Proceedings Volume 6474, Zinc Oxide Materials and Devices II; 64740Q (2007); doi: 10.1117/12.712784
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States
Abstract
Although ZnO has recently gained much interest as an alternative to the III-Nitride material system, the development of ZnO based optoelectonic devices is still in its infancy. Significant material breakthroughs in p-type doping of ZnO thin films and improvements in crystal growth techniques have recently been achieved, making the development of optoelectonic devices possible. ZnO is known to be an efficient UV-emitting material (~380 nm) at room temperature, optical UV lasing of ZnO has been achieved, and both homojunction and hybrid heterojunction LEDs have been demonstrated. In this paper, processing techniques are explored towards the achievement of a homo-junction ZnO LED. First, a survey of current ZnO processing methods is presented, followed by the results of our processing research. Specifically, we have examined etching through an n-ZnO layer to expose and make contact to a p-ZnO layer.
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Kathryn Minder, Ferechteh Hosseini Teherani, Dave Rogers, Can Bayram, Ryan McClintock, Patrick Kung, Manijeh Razeghi, "Etching of ZnO toward the development of ZnO homostructure LEDs", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64740Q (20 February 2007); doi: 10.1117/12.712784; https://doi.org/10.1117/12.712784
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KEYWORDS
Zinc oxide

Etching

Light emitting diodes

Dry etching

Wet etching

Gallium nitride

Heterojunctions

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