20 February 2007 Influence of annealing in oxygen ambient on crystal properties of rf-sputtered PZT layers on ZnO substrates
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Proceedings Volume 6474, Zinc Oxide Materials and Devices II; 64741B (2007); doi: 10.1117/12.706506
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States
Abstract
Lead zirconate titanate PbZr52Ti48O3 (PZT) layers were deposited on ZnO layers by rf-sputtering at varying substrate temperatures. The effect of annealing on PZT crystal properties has been studied by X-ray diffraction and atomic force microscopy. It is shown that the annealing in oxygen ambient has significant effect on the quality of the deposited PZT layers. The optimum growth temperature has been found to be 650 C.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ya. I. Alivov, F. Agra, B. Xiao, S. Chevtchenko, C. Litton, H. Morkoç, "Influence of annealing in oxygen ambient on crystal properties of rf-sputtered PZT layers on ZnO substrates", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64741B (20 February 2007); doi: 10.1117/12.706506; https://doi.org/10.1117/12.706506
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KEYWORDS
Ferroelectric materials

Annealing

Zinc oxide

Crystals

Oxygen

Perovskite

Atomic force microscopy

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