20 February 2007 Morphological control of ZnO nanostructures grown on silicon
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Abstract
We report growth of ZnO nanostructures on Au-coated Si substrates using vapor phase transport in the temperature range from 800°C to 1150°C. Nanostructures grown at 800°C are rod-like with diameters of ~ 200 nm. Growth at higher temperature shows a more complex behaviour with 2-D structures connecting 1-D nanorods at intermediate temperatures and 3-D growth at the highest temperatures. Our work indicates that it may be possible to systematically control the growth mode and morphology of ZnO nanostructures by tuning the growth temperature.
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R. T. Rajendra Kumar, R. T. Rajendra Kumar, J. Grabowska, J. Grabowska, J. P. Mosnier, J. P. Mosnier, M. O. Henry, M. O. Henry, E. McGlynn, E. McGlynn, } "Morphological control of ZnO nanostructures grown on silicon", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64741I (20 February 2007); doi: 10.1117/12.714026; https://doi.org/10.1117/12.714026
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