9 February 2007 Ultra-compact monolithically integrated photonic switches in InP
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We report development activities towards realization of fully integrated 1×2, 2×2 and 4×4 cross-point optical switches for WDM-packet based data networking. Two enabling technologies, quantum well intermixing and etched turning mirrors, are developed and demonstrated in InGaAs/InAlGaAs InP-based material at a wavelength of 1.55 &mgr;m. We describe the use of both technologies to fabricate switch chips with different port counts.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dan A. Yanson, Dan A. Yanson, Mark Silver, Mark Silver, Omar Vassalli, Omar Vassalli, Margaret Campbell, Margaret Campbell, Graeme Masterton, Graeme Masterton, Stewart D. McDougall, Stewart D. McDougall, John H. Marsh, John H. Marsh, "Ultra-compact monolithically integrated photonic switches in InP", Proc. SPIE 6476, Optoelectronic Integrated Circuits IX, 64760R (9 February 2007); doi: 10.1117/12.699013; https://doi.org/10.1117/12.699013

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