Q-modulated semiconductor laser

Jian-Jun He

doi:10.1117/12.708432

9 February 2007 Q-modulated semiconductor laser

Jian-Jun He

Proceedings Volume 6476, Optoelectronic Integrated Circuits IX; 64760S (2007) https://doi.org/10.1117/12.708432
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

A novel Q-modulation scheme for high-speed modulation of semiconductor laser is presented. The modulator consists of an anti-resonant Fabry-Perot cavity acting as a rear reflector of the laser. The change of the absorption coefficient in the modulator results in a change in the Q-factor of the laser, and consequently the lasing threshold and output power. Static and small-signal dynamic simulation results are presented, demonstrating its operating principle and distinct characteristics. The monolithically integrated Q-modulated laser (QML) has potential advantages of high speed, high extinction ratio, low wavelength chirp and high power efficiency.

Citation Download Citation

Jian-Jun He "Q-modulated semiconductor laser", Proc. SPIE 6476, Optoelectronic Integrated Circuits IX, 64760S (9 February 2007); https://doi.org/10.1117/12.708432

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