14 February 2007 Postgrowth wavelength engineering of InAs/InAlGaAs/InP quantum-dash-in-well lasers
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Abstract
Authors report the demonstration of the emission wavelength tuning of InAs quantum-dashes within InAlGaAs quantum-wells grown on InP substrate, that gives the initial wavelength emission at ~1.65 &mgr;m. The impurity-free dielectric cap annealing and the nitrogen ion-implantation induced intermixing techniques have been implemented to spatially control the group-III intermixing in the structure, which produces differential bandgap shift of 80 nm and 112 nm, respectively. Transmission electron microscopy, optical and electrical characterizations have been performed to evaluate the quality of the intermixed QD material and bandgap tuned devices. Compared to the control (nonintermixed) lasers, the light-current characteristics for the over 125 nm wavelength shifted QD lasers are not significantly changed suggesting that the quality of the intermixed material is well-preserved. The intermixed lasers exhibit the narrow linewidth as compared to the as-grown due to the improved QD homogeneity. The integrity of the QD material is retained after intermixing suggesting the potential application for the planar integration of multiple active/passive QD-based devices on a single InP chip.
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Hery S. Djie, Yang Wang, Boon S. Ooi, Dong-Ning Wang, James C. M. Hwang, Ying Wu, Xiao-Ming Fang, Joel Fastenau, Amy W. K. Liu, Gerard T. Dang, Wayne H. Chang, "Postgrowth wavelength engineering of InAs/InAlGaAs/InP quantum-dash-in-well lasers", Proc. SPIE 6476, Optoelectronic Integrated Circuits IX, 64760T (14 February 2007); doi: 10.1117/12.700904; https://doi.org/10.1117/12.700904
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