9 February 2007 Nano patterning fabrication by low energy microcolumn lithography
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Nano-pattering process by low-voltage electron beam lithography based on microcolumn with beam energy of 500 eV has been developed. Low kV exposure provides the advantages of high sensitivity, reduced charging, and a lack of proximity and heating effects. However a low-voltage electron beam has very thin penetration range. At 500 V, the penetration range is less than 20 nm, while typical resist thickness is > 200 nm. A resist process with bilayer scheme, 17 nm-thick PMMA resist on 100 nm-thick SiO2 layer, and wet etch method was demonstrated for 250 nm line patterns transfer to Si substrate. The process was applied to fabricate periodic grating patterns on a silicon substrate. The results of nano-pattern process by low energy microcolumn lithography will be discussed in detail.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takatoshi Yoshimoto, Takatoshi Yoshimoto, Seok Hyun Hwang, Seok Hyun Hwang, Kyong Hon Kim, Kyong Hon Kim, Do Jin Seong, Do Jin Seong, Dea Wook Kim, Dea Wook Kim, Young Chul Kim, Young Chul Kim, Seung Jun Ahn, Seung Jun Ahn, Ho Seob Kim, Ho Seob Kim, "Nano patterning fabrication by low energy microcolumn lithography", Proc. SPIE 6476, Optoelectronic Integrated Circuits IX, 647612 (9 February 2007); doi: 10.1117/12.707374; https://doi.org/10.1117/12.707374

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