14 February 2007 Germanium on silicon photodetectors for telecom wavelengths
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Abstract
This paper reports on fabrication and characterization of two kinds of photodetectors: interdigited metal-germanium on silicon-metal photodetectors (Metal-Semiconductor-Metal or MSM) and pin germanium photodiodes for operation at optical telecommunication wavelengths. For both 1.31 micron and 1.55 micron wavelengths, the measured -3dB bandwidth of interdigited MSM photodetectors is 35 GHz under 2V bias for electrode spacing equal to 0.5 micron. For pin diodes at 1.55 micron wavelength, the measured -3dB bandwidth under -3V bias ranges from 9 to 29 GHz for mesa diameters from 20 to 7 microns, respectively.
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Laurent Vivien, Laurent Vivien, Mathieu Rouvière, Mathieu Rouvière, Xavier Le Roux, Xavier Le Roux, Juliette Mangeney, Juliette Mangeney, Paul Crozat, Paul Crozat, Delphine Marris-Morini, Delphine Marris-Morini, Daniel Pascal, Daniel Pascal, Eric Cassan, Eric Cassan, Suzanne Laval, Suzanne Laval, Jean-François Damlencourt, Jean-François Damlencourt, Loubna El Melhaoui, Loubna El Melhaoui, Jean-Marc Fédéli, Jean-Marc Fédéli, } "Germanium on silicon photodetectors for telecom wavelengths", Proc. SPIE 6477, Silicon Photonics II, 647707 (14 February 2007); doi: 10.1117/12.700621; https://doi.org/10.1117/12.700621
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