14 February 2007 Germanium on silicon photodetectors for telecom wavelengths
Author Affiliations +
This paper reports on fabrication and characterization of two kinds of photodetectors: interdigited metal-germanium on silicon-metal photodetectors (Metal-Semiconductor-Metal or MSM) and pin germanium photodiodes for operation at optical telecommunication wavelengths. For both 1.31 micron and 1.55 micron wavelengths, the measured -3dB bandwidth of interdigited MSM photodetectors is 35 GHz under 2V bias for electrode spacing equal to 0.5 micron. For pin diodes at 1.55 micron wavelength, the measured -3dB bandwidth under -3V bias ranges from 9 to 29 GHz for mesa diameters from 20 to 7 microns, respectively.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laurent Vivien, Mathieu Rouvière, Xavier Le Roux, Juliette Mangeney, Paul Crozat, Delphine Marris-Morini, Daniel Pascal, Eric Cassan, Suzanne Laval, Jean-François Damlencourt, Loubna El Melhaoui, and Jean-Marc Fédéli "Germanium on silicon photodetectors for telecom wavelengths", Proc. SPIE 6477, Silicon Photonics II, 647707 (14 February 2007); doi: 10.1117/12.700621; https://doi.org/10.1117/12.700621

Back to Top