14 February 2007 Germanium on silicon photodetectors for telecom wavelengths
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This paper reports on fabrication and characterization of two kinds of photodetectors: interdigited metal-germanium on silicon-metal photodetectors (Metal-Semiconductor-Metal or MSM) and pin germanium photodiodes for operation at optical telecommunication wavelengths. For both 1.31 micron and 1.55 micron wavelengths, the measured -3dB bandwidth of interdigited MSM photodetectors is 35 GHz under 2V bias for electrode spacing equal to 0.5 micron. For pin diodes at 1.55 micron wavelength, the measured -3dB bandwidth under -3V bias ranges from 9 to 29 GHz for mesa diameters from 20 to 7 microns, respectively.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Laurent Vivien, Laurent Vivien, Mathieu Rouvière, Mathieu Rouvière, Xavier Le Roux, Xavier Le Roux, Juliette Mangeney, Juliette Mangeney, Paul Crozat, Paul Crozat, Delphine Marris-Morini, Delphine Marris-Morini, Daniel Pascal, Daniel Pascal, Eric Cassan, Eric Cassan, Suzanne Laval, Suzanne Laval, Jean-François Damlencourt, Jean-François Damlencourt, Loubna El Melhaoui, Loubna El Melhaoui, Jean-Marc Fédéli, Jean-Marc Fédéli, } "Germanium on silicon photodetectors for telecom wavelengths", Proc. SPIE 6477, Silicon Photonics II, 647707 (14 February 2007); doi: 10.1117/12.700621; https://doi.org/10.1117/12.700621


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