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9 February 2007 A CMOS-compatible rib waveguide with local oxidation of silicon isolation
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Abstract
The Local Oxidation of Silicon (LOCOS) technique is used to define optical rib waveguides in silicon-on-insulator (SOI) material. This process, commonly used for device isolation in purely microelectronic CMOS processes, results in a nearly planar surface suitable for integrating optical and electronic components on the same chip. Optical mode simulation was used to determine rib geometries suitable for single-mode propagation and minimizing birefringence in the 1550 nm optical telecommunications band. Test devices were then fabricated in SOI material with a Si film thickness near 3 microns. Growth of a 1 micron field oxide by wet oxidation yielded a 0.5 micron rib height. As-drawn rib widths ranged from 3 microns to 5 microns, giving final rib widths ranging from 2 microns to 4 microns after oxidation. Cutback optical testing of 3 microns drawn width ribs showed the loss to be less than 1 dB/cm at 1555 nm. Unbalanced Mach-Zehnder interferometers with Y-splitter junctions were also fabricated and tested with input wavelength swept from 1470 to 1580 nm and showed an extinction of 6-10 dB, demonstrating the ability of the LOCOS rib technique to produce more complex waveguide devices.
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Lynda K. Rowe, Michael Elsey, Edith Post, N. Garry Tarr, and Andrew P. Knights "A CMOS-compatible rib waveguide with local oxidation of silicon isolation", Proc. SPIE 6477, Silicon Photonics II, 64770L (9 February 2007); https://doi.org/10.1117/12.714641
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