Nano-engineered crystalline silicon for enhanced photoluminescence and 1.28&#956;m laser action: a study of mechanisms

Jeffrey M. Shainline; Sylvain G. Cloutier; Chih-Hsun Hsu; Jimmy M. Xu

doi:10.1117/12.699198

1 March 2007 Nano-engineered crystalline silicon for enhanced photoluminesence and 1.28μm laser action: a study of mechanisms

Jeffrey M. Shainline, Sylvain G. Cloutier, Chih-Hsun Hsu, Jimmy M. Xu

Author Affiliations +

Proceedings Volume 6477, Silicon Photonics II; 64770V (2007) https://doi.org/10.1117/12.699198
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

1.278μm laser emission has been observed in a SOI structure which has been nanopatterned to contain an array of nanopores. The optical transition is known to be associated with phononless recombination mediated by the bistable, carbon-related G-center. A physical model is proposed to explain the enhanced optical activity of the G-centers in the presence of the nanopore array. The effects of the SOI, strain, dielectric modification and breaking of phonon k-selection rules on the optical properties of the nanopatterned silicon are addressed. Temperature limitations are discussed.

Citation Download Citation

Jeffrey M. Shainline, Sylvain G. Cloutier, Chih-Hsun Hsu, and Jimmy M. Xu "Nano-engineered crystalline silicon for enhanced photoluminesence and 1.28μm laser action: a study of mechanisms", Proc. SPIE 6477, Silicon Photonics II, 64770V (1 March 2007); https://doi.org/10.1117/12.699198

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