1 March 2007 Nano-engineered crystalline silicon for enhanced photoluminesence and 1.28μm laser action: a study of mechanisms
Author Affiliations +
Abstract
1.278μm laser emission has been observed in a SOI structure which has been nanopatterned to contain an array of nanopores. The optical transition is known to be associated with phononless recombination mediated by the bistable, carbon-related G-center. A physical model is proposed to explain the enhanced optical activity of the G-centers in the presence of the nanopore array. The effects of the SOI, strain, dielectric modification and breaking of phonon k-selection rules on the optical properties of the nanopatterned silicon are addressed. Temperature limitations are discussed.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeffrey M. Shainline, Jeffrey M. Shainline, Sylvain G. Cloutier, Sylvain G. Cloutier, Chih-Hsun Hsu, Chih-Hsun Hsu, Jimmy M. Xu, Jimmy M. Xu, } "Nano-engineered crystalline silicon for enhanced photoluminesence and 1.28μm laser action: a study of mechanisms", Proc. SPIE 6477, Silicon Photonics II, 64770V (1 March 2007); doi: 10.1117/12.699198; https://doi.org/10.1117/12.699198
PROCEEDINGS
8 PAGES


SHARE
Back to Top