9 February 2007 Recent advances in high speed silicon optical modulator
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Proceedings Volume 6477, Silicon Photonics II; 647710 (2007); doi: 10.1117/12.703127
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States
Abstract
High-speed silicon optical modulator is one of key components for integrated silicon photonic chip aiming at Tb/s data transmission for next generation communication networks as well as future high performance computing applications. In this paper we review the recent development of the silicon modulator. In particular, we present a high-speed and highly scalable silicon optical modulator based on the free carrier plasma dispersion effect. The fast refractive index modulation of the device is due to electric-field-induced carrier depletion in a Silicon-on-Insulator waveguide containing a reverse biased pn junction. To achieve high-speed performance, a traveling-wave design is employed to allow co-propagation of electrical and optical signals along the waveguide. We demonstrate high-frequency modulator optical response with 3 dB bandwidth of ~20 GHz and data transmission up to 30 Gb/s. We also highlight the future device optimization for 40 Gb/s and beyond.
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Ansheng Liu, Ling Liao, Doron Rubin, Hat Nguyen, Berkehan Ciftcioglu, Yoel Chetrit, Rami Cohen, Nahum Izhaky, Juthika Basak, Mario Paniccia, "Recent advances in high speed silicon optical modulator", Proc. SPIE 6477, Silicon Photonics II, 647710 (9 February 2007); doi: 10.1117/12.703127; http://dx.doi.org/10.1117/12.703127
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KEYWORDS
Silicon

Modulators

Waveguides

Phase shifts

Modulation

Phase shift keying

Data transmission

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