21 February 2007 Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes
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Abstract
In this work, an AlSb-containing Type II InAs/GaSb superlattice, the so-called M-structure, is presented as a candidate for mid and long wavelength infrared detection devices. The effect of inserting an AlSb barrier in the GaSb layer is discussed and predicts many promising properties relevant to practical use. A good agreement between the theoretical calculation based on Empirical Tight Binding Method framework and experimental results is observed, showing the feasibility of the structure and its properties. A band gap engineering method without material stress constraint is proposed.
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B-M. Nguyen, B-M. Nguyen, M. Razeghi, M. Razeghi, V. Nathan, V. Nathan, Gail J. Brown, Gail J. Brown, } "Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes", Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 64790S (21 February 2007); doi: 10.1117/12.711588; https://doi.org/10.1117/12.711588
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