2 February 2007 Recent progress in W-structured type-II superlattice photodiodes
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Proceedings Volume 6479, Quantum Sensing and Nanophotonic Devices IV; 64790Y (2007); doi: 10.1117/12.714794
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States
Abstract
Recently we have achieved significant improvements in the performance of LWIR type-II superlattice photodiodes, with discrete devices beginning to demonstrate dynamic impedance-area product (R0A) levels approaching the MCT trend line and quantum efficiency exceeding 30% in devices without anti-reflection coatings. We discuss the key innovations that have led to these improvements, including modified W-structures, band-gap grading, and hybrid superlattices.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. H. Aifer, I. Vurgaftman, C. L. Canedy, J. H. Warner, E. M. Jackson, J. G. Tischler, J. R. Meyer, "Recent progress in W-structured type-II superlattice photodiodes", Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 64790Y (2 February 2007); doi: 10.1117/12.714794; https://doi.org/10.1117/12.714794
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KEYWORDS
Photodiodes

Quantum efficiency

Superlattices

Long wavelength infrared

Diodes

Mid-IR

Diffusion

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