2 February 2007 Recent progress in W-structured type-II superlattice photodiodes
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Abstract
Recently we have achieved significant improvements in the performance of LWIR type-II superlattice photodiodes, with discrete devices beginning to demonstrate dynamic impedance-area product (R0A) levels approaching the MCT trend line and quantum efficiency exceeding 30% in devices without anti-reflection coatings. We discuss the key innovations that have led to these improvements, including modified W-structures, band-gap grading, and hybrid superlattices.
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E. H. Aifer, I. Vurgaftman, C. L. Canedy, J. H. Warner, E. M. Jackson, J. G. Tischler, J. R. Meyer, "Recent progress in W-structured type-II superlattice photodiodes", Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 64790Y (2 February 2007); doi: 10.1117/12.714794; https://doi.org/10.1117/12.714794
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