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2 February 2007 High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3 μm
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Abstract
We report on recent advances in the performance of GaSb-based vertical-external-cavity surface-emitting lasers (VECSELs) emitting at wavelengths around 2.3 μm. Barrier-pumped VECSELs have been fabricated and analysed, which incorporates a diamond intra-cavity heat spreader as an efficient means for heat extraction from the active region. A maximum output power of 1.5 W has been achieved at a heat sink temperature of -20°C and still more than 1 W at 10°C. Two VECSEL structures with different spectral offsets ▵λ between the microcavity resonance and the maximum of the gain spectrum have been examined in particular. The results clearly show that the proper choice of this offset ▵λ is critical for an optimization of the high-power performance of the VECSEL, e.g. maximizing the output power before thermal rollover.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Rattunde, N. Schulz, C. Ritzenthaler, B. Rösener, C. Manz, K. Köhler, E. Wörner, and J. Wagner "High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3 μm", Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 647915 (2 February 2007); https://doi.org/10.1117/12.699208
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