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21 February 2007 Progress on new wide bandgap materials BGaN, BGaAlN and their potential applications
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Abstract
The development of wide band gap semiconductors extends their applications in optoelectronics devices to the UV domain. Compact lasers and high sensitivity APD detectors in UV range are currently needed for different applications such as, purification, covert communication and real time detection of airborne pathogens. Until now, the full exploitation of these potential materials has been limited by the lack of suitable GaN substrates. Recently, a novel class of materials has been reported based on BGaN and BAlN, potentially reducing the crystal defect densities by orders of magnitude compared to existing wide band gap heterostructures. Characteristics of these new alloys are similar to those of AlGaN materials with the advantage that these can be lattice matched to AlN and SiC substrates. In addition, these materials offer the possibility of using quaternary BAlGaN alloys at Ultra Violet (UV) wavelengths and hence lead to more degrees of freedom in designing sophisticated device structures. In this paper we describe the MOVPE growth conditions used to incorporate boron in GaN and AlGaN. Detailed characterization and analysis in terms of structural and electrical properties are discussed.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Ougazzaden, S. Gautier, T. Aggerstam, J. Martin, M. Bouchaour, T. Baghdadli, S. Ould Saad, S. Lourdudoss, and Z. Djebbour "Progress on new wide bandgap materials BGaN, BGaAlN and their potential applications", Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 64791G (21 February 2007); https://doi.org/10.1117/12.717640
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