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2 February 2007 Techniques for high quality SiO2 films
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Abstract
We report on the comparison of optical, structural, and electrical properties of SiO2 using plasma-enhanced chemical vapor deposition and ion-beam sputtering deposition. High-quality, low-temperature deposition of SiO2 by ion-beam sputtering deposition is shown to have lower absorption, smoother and more densely packed films, a lower amount of fixed oxide charges, and a lower trapped-interface density than SiO2 by plasma-enhanced chemical vapor deposition. This high-quality SiO2 is then demonstrated as an excellent electrical and mechanical surface passivation layer on Type-II InAs/GaSb photodetectors. The device performance improved by at least two orders of magnitude in surface resistivity, trap density, and zero-bias resistance-area product. The passivation layer also allows the device the ability to withstand the reflow and curing of underfill epoxy.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Nguyen and M. Razeghi "Techniques for high quality SiO2 films", Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 64791K (2 February 2007); https://doi.org/10.1117/12.716608
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