Techniques for high quality SiO2 films

J. Nguyen; M. Razeghi

doi:10.1117/12.716608

2 February 2007 Techniques for high quality SiO₂ films

J. Nguyen, M. Razeghi

Proceedings Volume 6479, Quantum Sensing and Nanophotonic Devices IV; 64791K (2007) https://doi.org/10.1117/12.716608
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We report on the comparison of optical, structural, and electrical properties of SiO₂ using plasma-enhanced chemical vapor deposition and ion-beam sputtering deposition. High-quality, low-temperature deposition of SiO₂ by ion-beam sputtering deposition is shown to have lower absorption, smoother and more densely packed films, a lower amount of fixed oxide charges, and a lower trapped-interface density than SiO₂ by plasma-enhanced chemical vapor deposition. This high-quality SiO₂is then demonstrated as an excellent electrical and mechanical surface passivation layer on Type-II InAs/GaSb photodetectors. The device performance improved by at least two orders of magnitude in surface resistivity, trap density, and zero-bias resistance-area product. The passivation layer also allows the device the ability to withstand the reflow and curing of underfill epoxy.

Citation Download Citation

J. Nguyen and M. Razeghi "Techniques for high quality SiO₂ films", Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 64791K (2 February 2007); https://doi.org/10.1117/12.716608

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