6 February 2007 A two-photon sequential absorption photocurrent generation process in modulation doped InAs/GaAs quantum dots
Author Affiliations +
Abstract
A two-photon sequential absorption photocurrent generation process in modulation doped InAs/GaAs quantum dot (QD) is proposed and analyzed. Enhanced nonlinear absorption is expected due to the long excited sate lifetime. Ultra-low leakage current has been verified. A High photodetectivity of > 1011cmHz1/2/W can be obtained at 180K. The two-photon sequential absorption photocurrent generation process is promising to achieve thermal-electrically cooled long-wave infrared (LWIR 8-12μm) photodetector with high photodetectivity.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xuejun Lu, Mark Meisner, "A two-photon sequential absorption photocurrent generation process in modulation doped InAs/GaAs quantum dots", Proc. SPIE 6481, Quantum Dots, Particles, and Nanoclusters IV, 64810K (6 February 2007); doi: 10.1117/12.711001; https://doi.org/10.1117/12.711001
PROCEEDINGS
8 PAGES


SHARE
Back to Top