This paper mainly focuses on the simulation for temperature-dependent Distributed Bragg Reflector (DBR) of
850nm vertical cavity surface emitting laser (VCSEL) with Transmission Matrix (TMM), Matrix Calculating Methods
(MCM) and Macleod Model and performance for comparison with proton-implant/oxide confined process on VCSEL.
Using well-developed temperature-dependent DBR-reflectivity solver with Mathcad simulator, we have successfully
compared the Macleod Model simulator with theoretical self-developed solution based on the Transmission Matrix
(TMM), Matrix Calculating Methods (MCM) and find very good agreement with previous results while accounting for
influences of conjugated part of refractive index and graded Al compositions of DBR materials. Moreover,
optoelectronic performance of Proton-Implant/Oxide Confined 850nm VCSEL have been demonstrated on this paper
using temperature-dependent power output, voltage/injection current, transverse operating wavelengths, optical spectral
characteristics, slope efficiency and transverse optical modes with an approximated Marcatili's method extracted and
measurement from systematically measuring experiments. Through adequate and precise LD device design and
processes, we have proposed the high performance single-mode proton implanted in contrast to the oxide confined 850
nm VCSEL. Under nominal temperature-variety and keeping operating temperature of 30°C,the threshold voltage,
injecting current, peak-wavelength and differential resistance of the proton implanted VCSEL with the optical aperture in
the dimension of 10 &mgr;m are 1.8 V, 3.2 mA, 851 nm and 36.8 ohm, respectively.