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8 February 2007Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375nm to 470 nm spectral range
We measure gain spectra for commercial (Al,In)GaN laser diodes with peak gain wavelengths of 470 nm, 440 nm,
405 nm, and 375 nm, covering the spectral range accessible with electrical pumping. For this systematic study we
employ the Hakki-Paoli method, i.e. the laser diodes are electrically driven and gain is measured below threshold
current densities. The measured gain spectra are reasonable for a 2D carrier system and understandable when
we take into account homogeneous and inhomogeneous broadening. While inhomogeneous broadening is almost
negligible for the near UV laser diode, it becomes the dominant broadening mechanism for the longer wavelength
laser diodes. We compare the gain spectra with two models describing the inhomogeneous broadening. The first
model assumes a constant carrier density, while the second model assumes a constant quasi Fermi level. Both
are in agreement with the experimental gain spectra, but predict very different carrier densities. We see our
measurements as providing a set of standard gain spectra for similar laser diodes covering a wide spectral range
which can be used to develop and calibrate theoretical manybody gain simulations.
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Ulrich T. Schwarz, Harald Braun, Kazunobu Kojima, Mitsuru Funato, Yoichi Kawakami, Shinichi Nagahama, Takashi Mukai, "Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375nm to 470 nm spectral range," Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648506 (8 February 2007); https://doi.org/10.1117/12.705867