8 February 2007 High-power operation of inner-stripe GaN-based blue-violet laser diodes
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We review our recent progress in novel planar blue-violet laser diodes (BV-LDs). The planar BV-LDs are characterized by an inner-stripe waveguide formed with a buried AlN current-blocking layer and a wide regrown cladding layer that also acts as a current and heat spreader. These features enable high-power operation for BV-LDs thanks to their low electrical and low thermal resistance even with a narrow-stripe waveguide. In this paper, we report successful demonstration of the planar inner-stripe BV-LDs by utilizing low-temperature-grown AlN and the regrown cladding layer. Low electrical resistance of the regrown cladding layer was confirmed by scanning spread resistance microscopy. Heat spreading characteristics were also investigated by 2-dimensional thermal simulation. The fabricated BV-LDs with a 1.4-&mgr;m-wide stripe achieved a low threshold current of 32 mA, a low threshold voltage of 4.1 V and greater than 200- mW kink-free output power under CW operation. Moreover, the kink-free output level surpassed 1,000 mW for the 1.0- &mgr;m stripe BV-LDs under 0.03%-duty-pulsed operation. The BV-LDs operated stably for more than 1,000 hours at a high output power of 200 mW at 80oC under a 50%-duty-pulsed condition. After the reliability test, transmission electron microscopy revealed no defect near the regrown interface of the tested LDs.
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Masaki Ohya, Masaki Ohya, Kazuhisa Fukuda, Kazuhisa Fukuda, Ichiro Masumoto, Ichiro Masumoto, Shigeru Kohmoto, Shigeru Kohmoto, Koichi Naniwae, Koichi Naniwae, Mitsuki Yamada, Mitsuki Yamada, Masahige Matsudate, Masahige Matsudate, Takumi Tsukuda, Takumi Tsukuda, Takeshi Akagawa, Takeshi Akagawa, Chiaki Sasaoka, Chiaki Sasaoka, } "High-power operation of inner-stripe GaN-based blue-violet laser diodes", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648505 (8 February 2007); doi: 10.1117/12.714209; https://doi.org/10.1117/12.714209

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