8 February 2007 Toward an AlGaAsSb/GaInAsSb/GaSb laser emitting beyond 3 &mgr;m
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Abstract
We have made quantum wells laser diodes by Molecular Beam Epitaxy with emission wavelengths from 2.3 &mgr;m to 3.1 &mgr;m. With growing wavelength, threshold current densities increase almost exponentially. We obtained threshold values as low as 65 A/cm2 at 2.3 &mgr;m and 156 A/cm2 at 2.62 &mgr;m. At the same time, the valence-band offset decrease from 132 meV (at 2.3 &mgr;m) to 78 meV (at 2.6 &mgr;m). A threshold current density study shows that Auger effect is not the only responsible for the augmentation of Jth. The reduction of internal efficiency ηi has a greater impact on the increase of Jth. The diminution of the holes confinement is incriminated for the degradation of ηi with growing wavelength. Therefore, to improve Jth at higher wavelengths another kind of barrier has to be utilized (for example, thanks to the use of the quinary material AlGaInAsSb).
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Julie Angellier, David Barat, Guilhem Boissier, France Chevier, Pierre Grech, Yves Rouillard, "Toward an AlGaAsSb/GaInAsSb/GaSb laser emitting beyond 3 &mgr;m", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 64850B (8 February 2007); doi: 10.1117/12.698151; https://doi.org/10.1117/12.698151
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