8 February 2007 Properties of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.55um
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Abstract
The room-temperature 1.55 &mgr;m continuous-wave (CW) operation of single-lateral mode GaInNAsSb ridge waveguide lasers grown on GaAs is reported. Detailed measurements of the light output power and spectral properties were used to assess the device characteristics as a function of applied current and temperature in both CW and pulsed operation. An exemplary, 3&mgr;×750&mgr;m, device with a 92% high-reflectivity back facet coating exhibited a record low CW threshold current of 63~mA, with a peak output power of 15~mW. High-resolution modal gain spectra were extracted from amplified spontaneous emission measurements yielding the internal loss (8.0~cm-1, transparency current (50~mA) and the wavelength dependence of the differential gain. The latter was used with careful measurements of the Fabry-Perot mode shift with injection current to determine the linewidth enhancement factor of 2.8 at the transparency current. The first measurement of intrinsic modulation frequency in 1.55 &mgr;m GaInNAsSb lasers is reported, based on the observed relative intensity noise (RIN). The RIN measurements indicate a maximum modulation frequency of 7.2~GHz, which is a promising result for future telecommunications applications.
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James A. Gupta, James A. Gupta, Pedro J. Barrios, Pedro J. Barrios, Greg J. Pakulski, Greg J. Pakulski, Geof C. Aers, Geof C. Aers, Juan A. Caballero, Juan A. Caballero, Daniel Poitras, Daniel Poitras, Xiaohua Wu, Xiaohua Wu, } "Properties of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.55um", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 64850S (8 February 2007); doi: 10.1117/12.714271; https://doi.org/10.1117/12.714271
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