8 February 2007 High power pure-blue semiconductor lasers
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We developed high-power and long-lived AlGaInN-based pure-blue semiconductor lasers emitting in the 440-450 nm wavelength range. The half lifetime (the time for the output power to degrade to half its initial value in constant current mode) was estimated to be more than 10000 hours at a power of 0.75 W under continuous-wave operation at 35°C. Reducing the density of structural defects newly originating from the multiple quantum well active layer and reducing the operating current density were shown to be important for producing high-performance pure-blue lasers.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Osamu Goto, Osamu Goto, Shigetaka Tomiya, Shigetaka Tomiya, Yukio Hoshina, Yukio Hoshina, Takayuki Tanaka, Takayuki Tanaka, Makoto Ohta, Makoto Ohta, Yoshitsugu Ohizumi, Yoshitsugu Ohizumi, Yoshifumi Yabuki, Yoshifumi Yabuki, Kenji Funato, Kenji Funato, Masao Ikeda, Masao Ikeda, "High power pure-blue semiconductor lasers", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 64850Z (8 February 2007); doi: 10.1117/12.725162; https://doi.org/10.1117/12.725162


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