26 February 2007 High-temperature silicon evanescent lasers
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We present an electrically pumped silicon evanescent laser that utilizes a silicon waveguide and offset AlGaInAs quantum wells. The silicon waveguide is fabricated on a Silicon-On-Insulator (SOI) wafer and is bonded with the AlGaInAs quantum well structure using low temperature O2 plasma-assisted wafer bonding. The optical mode in the hybrid waveguide is predominantly confined in the passive silicon waveguide and evanescently couples into the III-V active region providing optical gain via electrical current injection. The device lases continuous wave at 1577 nm with a threshold of 65 mA at 15 °C. The maximum single-sided fiber-coupled cw output power is 1.8 mW. The maximum operating temperature is 40 °C mainly limited by a high series resistance of the device. Operation up to 60 °C should be achievable by lowering the series resistance and thermal impedance.
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John E. Bowers, Hyundai Park, Alexander W. Fang, Richard Jones, Oded Cohen, Mario J. Paniccia, "High-temperature silicon evanescent lasers", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648515 (26 February 2007); doi: 10.1117/12.714274; https://doi.org/10.1117/12.714274

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