8 February 2007 Highly strained InGaAs lasers grown by MOVPE with low threshold current density
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Abstract
Recently, GaAs-based long wavelength lasers have attracted much attention owing to their advantages such as low substrate cost, mature AlGaAs/GaAs DBR and the high conduction band offset. Among the GaAs-based material system, highly compressive strained InGaAs would be a suitable candidate for the 1300nm VCSEL application while combined with the large gain-cavity detuning technique. In this work, we have successfully fabricated the highly compressivestrained InGaAs broad-area lasers grown by MOVPE. After optimized the epitaxial parameters, these lasers were operating at 1219.56nm with narrow line width of 0.08nm. The InGaAs laser could be operated under continuously waving (CW) situation at 20°C, while its threshold current density Jth was 140A/cm2. To our knowledge, the demonstrated InGaAs QW laser has the lowest Jth/QW =46.7 A/cm2. The fitted characteristic temperature (T0) was 146.2K indicating the good electron confinement ability. In addition, by lowering the growth temperature to 475°C, we have also obtained the InGaAs/GaAs double quantum wells whose PL peak was at 1244.5nm and FWHM was 43meV. These good characteristics indicate the possibility of fabricating InGaAs VCSELs lasing at 1300nm.
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W. C. Chen, W. C. Chen, Y. K. Su, Y. K. Su, R. W. Chuang, R. W. Chuang, M. C. Tsai, M. C. Tsai, } "Highly strained InGaAs lasers grown by MOVPE with low threshold current density", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648518 (8 February 2007); doi: 10.1117/12.700412; https://doi.org/10.1117/12.700412
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