13 February 2007 Studies of InGaN LEDs degradation
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Abstract
Light-emitting diodes (LEDs) degradation during 10 000 hours and the influence of ultrasonic action on the InGaN LEDs were investigated. The model of LED degradation is suggested and based on 1) common LED is the combination of parallel Small-LEDs (S-LED) which correspond to the areas with different concentration of In atoms; 2) redistribution of In atoms in quantum-dimensional active region of blue InGaN LED under strong piezoelectric effect and spontaneous polarization induced by ultrasonics; 3) the ultrasonics which is used in creating LEDs can make defects in heterostructures and they (during LEDs work) are heated by current or ultrasonic, can be increased and that's why nonradiation recombination decreases LEDs efficiency. It can be said that great current density flows through areas with low In concentration and therefore S-LEDs are "burned out" and irradiate less. At the areas with average In concentration the densities decrease. That is why electroluminescence spectrum, radiation power, luminous intensity characteristics are shifted to the long wave region. All that also exactly corresponds with our experimental results of LEDs degradation investigation during 10 000 hours.
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O. I. Rabinovich, F. I. Manyakhin, E. K. Naimi, S. G. Nikiforov, V. P. Sushkov, I. G. Ermoshin, A. V. Shishov, "Studies of InGaN LEDs degradation", Proc. SPIE 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI, 64860L (13 February 2007); doi: 10.1117/12.697277; https://doi.org/10.1117/12.697277
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