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13 February 2007 Modeling of GaN based resonant-cavity light-emitting diode
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Abstract
We extended the theory by Henry [1] to accurately treat the coupling of spontaneous emission noise with microcavity modes. The Green's function method is employed to solve the inhomogeneous wave equation including a Langevin force f&comega; which accounts for spontaneous emission by carriers at angular frequency &comega;. The optical wave equation is coupled with the self-consistent calculations of the material spontaneous emission rate of quantum well/dot using envelope wavefunction method. Finally the carrier transport equations are solved within the framework of 2D/3D drift-diffusion model implemented in the Crosslight Software package APSYS [2]. The simulation results of a GaN based resonant-cavity light-emitting diode (RC-LED) showed that our models can be used to predict the characteristics of RC-LED.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. Simon Li, Z. Q. Li, and Ray-Hua Horng "Modeling of GaN based resonant-cavity light-emitting diode", Proc. SPIE 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI, 64860S (13 February 2007); https://doi.org/10.1117/12.696651
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