26 February 2007 Fabrication of high-power AlInGaP-based red light emitting diodes with novel package by electroplating
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Abstract
Thermal management is now a critical problem for applications of high power light emitting diodes (LEDs). This paper develops a novel LEDs (Fig.1a) package technique that can overcome thermal problem, and the ability to drive the red LEDs at higher power. Copper is plated on the AlInGaP-based red LED chip directly, and the thermal resistance from chip to the metal heat sink is decreased greatly. With the copper plating layer, the working current of the AlInGaP-based red LED can be increased from conventional 350 mA to 1650mA in room temperature. It was found that the luminous intensity at 350 and 1050 mA of the novel package LEDs showed 53% and 431% enhancement as compared with those of the conventional package ones (Fig.1b). The electrical and optical characteristics of two kind's packages were shown in Figure 2 and Figure 3, respectively.
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K. C. Chen, Y. K. Su, J. Q. Huang, C. L. Lin, Ricky W. Chuang, "Fabrication of high-power AlInGaP-based red light emitting diodes with novel package by electroplating", Proc. SPIE 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI, 648616 (26 February 2007); doi: 10.1117/12.697854; https://doi.org/10.1117/12.697854
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